Papers by Author: S.M. Voloshko

Abstract: The Problem of Solving Diffusion Equation with Free Boundary which Appeared during the Modeling of the Spherical Inclusion Formation Process within Spherical Domain Is Examined. the Algorithm and the Software Were Developed on the Basis of the Rothe Method in Combination with the Integral-Equations Method for their Numerically-Analytical Solution. Results of the Calculations Are Illustrated Graphically.

Abstract: Processes involved in the structure and phase formation in the thin film systems Sn(4 nm)/Cu(14 nm) and Сu(14 nm)/Sn(8 nm) in the temperature range 130-500 оС were studied using “in situ” electron imaging and Transmission Electron Microscopy methods (TEM). Solubility of Sn α – solid solution Cu-Sn has been determined from the changes in the lattice parameter. This work was performed in the framework of the Swedish Institute supported cooperative research project “Thin metal films – the interplay of structure diffusion and boundaries” (SI dnr 00699/2009).

Abstract: Thermally stimulated solid state reactions in the Ni(10 nm)/Si(001) film system that occur under the annealing in the nitrogen ambient were researched by methods of сross-sectional transmission electron microscopy and scanning electron microscope. It was established that NiSi2 formation consists of several steps: a formation of the NiSi polycrystalline silicide thickness of which twice higher initial thickness of Ni layer; prevailed diffusion of Ni atoms out of NiSi into Si substrate according with lattice mechanism and appearing of exceeding vacancies at grain boundaries; a formation of epitaxial NiSi2 nuclei at separate spots of NiSi/Si(001) interface; regular growth of NiSi2 phase inclusions at the expense of NiSi layer “diffusion dissolution”; a formation of NiSi2 spherical inclusions in the lattice of Si matrix and their coalescence.

Abstract: The laser-induced mass transfer in thin-film substrate /Cr/Cu/Ni system is studied by means of Auger Electron Spectroscopy (AES). For the laser-pulse energy values, E = 100-170mJ, the diffusion of Cu atoms into Ni layer and their accumulation within this layer are observed, whereas at E > 170mJ the same is true for Cr atoms. The observed phenomena are explained on the basis of calculated temperature distribution in the system at issue during lased action. Enhanced transfer of Cr atoms towards external surface is observed under the irradiation regimes leading to the melting of intermediate copper layer. Diffusion coefficients of copper and chromium calculated from their surface accumulation show an exponential dependence on the laser-pulse energy. Under laser heating, the diffusion processes are more manifested as compared with those under conventional thermal annealing. This is bound up with higher concentration of nonequilibrium defects generated within the irradiation zone.

Abstract: The method of Ionization Spectroscopy is used to study the thermo-induced kinetics of surface segregation of the Pt80Co20(111) alloy components. The temperature dependence of the Co diffusion coefficient in this alloy is determined. It is found that the value of the activation energy for the segregation of Co atoms in the near-surface region is close to the heat of sublimation of pure Co.

Abstract: Low-temperature diffusion in thin films of the stable isotopes, 56Fe/57Fe, was studied by applying secondary ion mass spectrometry (SIMS). Processing of the concentration profiles obtained was done by using the Hall – Morabitto “median gradient” method. The bulk and intergrain selfdiffusion coefficients were determined.