HomeS. Ortolland

Papers by Author: S. Ortolland

Paper TitlePage

Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Authors: G.J. Phelps, Nicolas G. Wright, E.G. Chester, C. Mark Johnson, Anthony G. O'Neill, S. Ortolland, Alton B. Horsfall, Konstantin Vassilevski, Russell Gwilliam

855

Double Implanted Power MESFET Technology in 4H-SiC

Authors: Alton B. Horsfall, S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights

707

Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor

Authors: S. Ortolland, Nicolas G. Wright, C. Mark Johnson, A.P. Knights, Paul G. Coleman, C.P. Burrows, A.J. Pidduck

567

TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors

Authors: Kazuhiro Adachi, C. Mark Johnson, S. Ortolland, Nicolas G. Wright, Anthony G. O'Neill

1419

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Authors: S. Ortolland, Marie Laure Locatelli, Dominique Planson, Jean-Pierre Chante, A. Senes

1045