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Articles by author: Sergey A. Reshanov

• (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2006 (p307)
• 3C-SiC MOS Based Devices: From Material Growth to Device Characterization
  Published in: Silicon Carbide and Related Materials 2010 (p433)
• A Simple Model of 3d Impurities in Cubic Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p515)
• A Theoretical and Experimental Comparison of 4H- and 6H-SiC MSM UV Photodetectors
  Published in: Silicon Carbide and Related Materials 2011 (p1207)
• Comparative Study of Thermal Oxides and Post-Oxidized Deposited Oxides on n-Type Free Standing 3C-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p829)
• Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p417)
• Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
  Published in: Silicon Carbide and Related Materials 2009 (p439)
• Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p417)
• Electrical and Optical Characterization of SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p365)
• Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials - 2002 (p459)
• EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
  Published in: Silicon Carbide and Related Materials - 2002 (p507)
• Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
  Published in: Silicon Carbide and Related Materials 2009 (p661)
• Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials 2000 (p53)
• Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p637)
• High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
  Published in: Silicon Carbide and Related Materials 2008 (p765)