Papers by Author: Shin Ichi Kinouchi

Abstract: For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We have successfully completed the operation of the SiC inverter module at continuous rating of up to 11kW with carrier frequency of 20 kHz. The power loss during the operation was measured by calorimetric method and the results showed that the loss was considerably reduced by 30% of a similar rating commercialized IGBT power module at carrier frequency of 15 kHz.

Abstract: A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a thermally permissive range. The power loss of the module of the converter measured under motor operations is less than 50% of the similar-rating Si module loss. The shrink of the effective volume of DC-link capacitor is necessary to achieve the high power-density SiC converter, in addition to the decrease of the cooling system volume due to the loss reduction caused by SiC devices.

Abstract: Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.