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Articles by author: Shinichi Nakashima

• A Raman Study of Metal-SiC Interface Reactions
  Published in: Silicon Carbide and Related Materials 2001 (p637)
• Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
  Published in: Silicon Carbide and Related Materials 2003 (p621)
• Carrier Density Evaluation in P-Type SiC by Raman Scattering
  Published in: Silicon Carbide and Related Materials - 1999 (p607)
• Characterization of Electrical Properties in High-Dose Implanted and Post-Implantation-Annealed 4H-SiC Wafers using Infrared Reflectance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p905)
• Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p501)
• Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p333)
• Continuous Growth of SiC Single Crystal by the Spray Dried Powder Made of Ultra-Fine Particle Precursors
  Published in: Silicon Carbide and Related Materials 2003 (p131)
• Continuous Growth of SiC Single Crystal from Ultrafine Particle Precursor
  Published in: Silicon Carbide and Related Materials - 2002 (p79)
• Deep UV Excitation Raman Spectroscopy of Homoepitaxial 4H-SiC Films Grown by Microwave Plasma Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2003 (p629)
• Defect Formation Mechanism of Bulk SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p41)
• Electronic Properties of Doped SiC at Elevated Temperatures Studied by Raman Scattering
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p449)
• Homoepitaxial Growth of 4H-SiC Thin Film Below 1000ºC by Microwave Plasma Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p299)
• Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
  Published in: Silicon Carbide and Related Materials 2006 (p1043)
• Photoluminescence Mapping of a SiC Wafer in Device Processing
  Published in: Silicon Carbide and Related Materials 2003 (p569)
• Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p669)