Papers by Author: Takanori Kiguchi

Abstract: The effects of processing conditions on the morphologies of Mn-doped BiFeO₃ thin films have been investigated. BiFeO₃ thin films were prepared on a SrTiO₃ (001) substrate by CSD method. BiFeO₃ grew epitaxially on SrTiO₃ and Bi₂Fe₄O₉ has also orientation relationships with BiFeO₃. It was found that the formation of Bi₂Fe₄O₉ was promoted in an O₂ atmosphere. Island morphologies were observed in the BiFeO₃ thin films after post-annealing at 1023K both in N₂ and O₂ atmospheres. The formation of the islands is promoted in an O₂ atmosphere.

Abstract: The ferroelectric domain structure of PbTiO₃ (PTO) films was investigated by using transmission electron microscopy (TEM). In the film with PTO/SrTiO₃ (STO) structure, 180º domains are formed near the SrTiO₃ (STO) substrate and the domain length of 180º domains is 100 nm. However, 180º domains are not formed in the film with Pt/PTO/SrRuO₃ (SRO)/STO structure. These results show that 180º domains are formed in order to minimize depolarizing field energy, and that the domain length of 180º domains is determined by the competition among the depolarizing field energy, domain wall energy, Coulomb interaction and elastic interaction.

Abstract: Highly oriented and polycrystalline Gd₂O₃ doped CeO₂ thin films were prepared on α-Al₂O₃(0001) substrates by chemical vapor deposition, using Ce(C₅H₄C₂H₅)₃ and Gd(C₅H₄C₂H₅)₃ as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Abstract: We investigated electrical properties of epitaxial Mn doped bismuth ferrite BiFe0.97Mn0.03O3 (BFMO) thin films with different crystal orientations deposited on Si substrates with appropriate buffer layers. Epitaxial SrRuO3 (SRO) thin films with (001), (101), and (111) orientations were grown on CeO2/yttria-stabilized zirconia (YSZ)/Si(001) substrates and YSZ/Si(001), respectively, by the insertion of MgO and TiO2 atomic layers using pulsed-laser deposition (PLD). Using spin coating, we deposited BFMO thin films onto orientated SRO thin films. The BFMO orientation followed the SRO orientation. The Pr values of the BFMO were ordered as follows {111}>{110}>{100}, which is the same as that predicted by crystallographic considerations. The largest Pr value of the {111} orientation is 76 μC/cm2 at 100 kHz, 25°C.

Abstract: Lithium niobate (LiNbO3) thin films were deposited on Al2O3(001) substrates using metal-organic chemical vapor deposition (MOCVD), with Li(dpm) and Nb(C2H5)5 as precursors. By optimizing the conditions of thin film deposition, the c-axis oriented and epitaxially grown LiNbO3 thin films with stoichiometric composition were deposited on an Al2O3(001) substrate. The refractive index of the stoichiometric LiNbO3 thin film was 2.24 at = 632.8 nm, which is close to that of bulk crystal.

Abstract: Thin films of HfO2 were fabricated on a p-Si(001) substrate using double pulse excitation (DPE) pulsed laser deposition (PLD) with KrF excimer and Nd:YAG lasers, and using conventional Nd:YAG laser PLD under two typical oxygen pressures (7.3 × 10-2 and 7.3 × 10-1 Pa). At 400°C or higher temperatures, the films are crystalline; at less than 400°C, they are amorphous. At higher oxygen pressures, DPE-PLD was effective against droplets. Then the surface morphology and electrical insulation properties of thin films were improved. At lower pressure, DPE-PLD was ineffective.

Abstract: Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films were fabricated on (La,Sr)CoO3/CeO2/ YSZ coated Si substrates by double-pulse excitation PLD with and without a mask. For double-pulse excitation PLD without a mask in conditions of Nd:YAG laser irradiation before defocused KrF-excimer-laser irradiation, the surface roughness of PMN-PT thin films was rather less than that of the films fabricated using Nd:YAG single laser PLD. Thin films with smoother surfaces were deposited at the high deposition rate of 5.6 nm·min-1 using the mask and the double-pulse excitation PLD method in conditions of irradiation of Nd:YAG laser after KrF excimer laser at 0.5 =s delays.

Abstract: Pb(Zr, Ti)O3 thin films were successfully prepared on (111)Pt/IrO2/SiO2/(100)Si substrates using SrTiO3 seeds at 290 oC by RF inductive heating type and 350 oC by resistive heating type metalorganic chemical vapor deposition method (MOCVD), respectively. The SrTiO3 was chosen as seed layers and prepared by pulsed laser deposition method. The crystal structures and orientations of SrTiO3 seeds were changed by deposition temperature. In the case of preparation with RF inductive heating MOCVD, the remanent polarization (2Pr) and coercive field (2Ec) were 42 μC/cm2 and 256 kV/cm, respectively.

Abstract: Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 @C/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 @C/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.

Abstract: Pb(Zr0.05Ti0.95)O3/(La,Sr)CoO3 thin films were prepared by pulsed laser deposition (PLD) on SrTiO3(001) substrates. Phase transition behavior of Pb(Zr0.05Ti0.95)O3 (PZT) was investigated using high temperature X-ray diffraction (HT-XRD) and high-temperature electrical measurement. The phase transition temperature of PZT thin film is larger than bulk one. In 100 and 200nm-thickness epitaxial PZT thin films, the phase transition temperatures obtained from X-ray diffraction measurement and electrical property measurement are in good agreement.