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Articles by author: Takanori Kiguchi

• AEM Investigation of Interface Structure of Y₂O₃-Ta₂O₅ Co-Doped Zirconia Buffer Layer
  Published in: Electroceramics in Japan VII (p237)
• Analysis of Formation Process of Ferroelectric Domain Structure in PZT Thin Films by In-Situ TEM
  Published in: Asian Ceramic Science for Electronics II and Electroceramics in Japan V (p203)
• Characterization of Low Temperature Chemical Vapor Deposited Gd₂O₃ Doped CeO₂ Films
  Published in: Electroceramics in Japan XIV (p133)
• Effect of Source Supply Methods on Low-Temperature Preparation of Lead Zirconate Titanate Thin Films Using SrTiO₃ Seed Layers by Metallorganic Chemical Vapor Deposition
  Published in: Advances in Nanomaterials and Processing (p153)
• Effect on Crystal Orientation on Residual Stress and Electrical Properties of a PZT Thin Film Deposited on Buffered-Si Substrate
  Published in: Electroceramics in Japan IX (p65)
• Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation
  Published in: Electroceramics in Japan X (p111)
• Fabrication of HfO₂ Thin Film on Si Substrate by Double-Pulse Excitation PLD
  Published in: Electroceramics in Japan X (p129)
• Ferroelectric Properties of Epitaxial BiFe_0.97Mn_0.03O₃ Thin Films with Different Crystal Orientations Deposited on Buffered Si Substrates
  Published in: Asian Ceramic Science for Electronics III and Electroceramics in Japan XII (p111)
• Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics
  Published in: Electroceramics in Japan VI (p137)
• In Situ Simultaneous Observation of Phase Transition and Electrical Properties of Pb(Zr,Ti)O₃ Thin Film by High Temperature XRD and Electrical Measurement Apparatus
  Published in: Electroceramics in Japan IX (p53)
• Investigation of Domain Structure and Electrical Properties of Monoclinic Epitaxial Zirconia Buffer Layer
  Published in: Electroceramics in Japan VIII (p261)
• Preparation and Optical Properties of Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition
  Published in: Electroceramics in Japan VIII (p265)
• Preparation of Epitaxial LiNbO₃ Thin Film by MOCVD and its Properties
  Published in: Electroceramics in Japan XI (p179)
• SiO_x Formation Process between YSZ and Si Substrate in YSZ/Si Thin Films by In-Situ TEM Analysis
  Published in: Electroceramics in Japan IV (p153)
• TEM Observation on Ferroelectric Domain Structures of PbTiO₃ Epitaxial Films
  Published in: Electroceramics in Japan XIV (p179)