HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Takeshi Endo

• (11-20) Face Channel MOSFET with Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1119)
• 1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current
  Published in: Silicon Carbide and Related Materials 2007 (p939)
• 600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination
  Published in: Silicon Carbide and Related Materials 2006 (p857)
• Ab Initio Calculations of SiO₂/SiC Interfaces and High Channel Mobility MOSFET with (11-20) Face
  Published in: Silicon Carbide and Related Materials 2008 (p793)
• Effect of Soluble Nitrogen on the Creep Strength of an Austenitic 25Cr-20Ni Steel
  Published in: Creep and Fracture of Engineering Materials and Structures (p445)
• Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets
  Published in: Silicon Carbide and Related Materials - 1999 (p265)
• High Channel Mobility of MOSFET Fabricated on 4H-SiC (11-20) Face Using Wet Annealing
  Published in: Silicon Carbide and Related Materials 2007 (p691)
• Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET
  Published in: Silicon Carbide and Related Materials 2004 (p817)
• New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2010 (p298)
• Phase Transformation of Gd₄Al₂O₉ at High Temperature
  Published in: Euro Ceramics V (p647)
• Reliability of Low-Temperature Poly-Si Thin-Film Transistors
  Published in: Polycrystalline Semiconductors VII (p43)
• Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
  Published in: Silicon Carbide and Related Materials 2010 (p694)
• Synthesis of Aluminium Nitride Using Urea-Precursors
  Published in: Novel Synthesis and Processing of Ceramics (p53)