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Articles by author: Thierry Billon

• 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
  Published in: Silicon Carbide and Related Materials 2001 (p1435)
• Advances in SiC Materials and Technology for Schottky Diode Applications
  Published in: Silicon Carbide and Related Materials 2001 (p1119)
• Al and Al/C High Dose Implantation in 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p885)
• Barrier and Copper Seedlayer Wet Etching
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p361)
• Cubic SiC Surface Structure Studied by X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials - 2002 (p571)
• DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown
  Published in: Silicon Carbide and Related Materials - 1999 (p1215)
• Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
  Published in: Silicon Carbide and Related Materials 2001 (p1161)
• Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
  Published in: Silicon Carbide and Related Materials - 1999 (p715)
• Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
  Published in: Silicon Carbide and Related Materials - 2002 (p201)
• Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p141)
• Impact of the Growth Parameters on the Structural Properties of Si_0.8Ge_0.2 Virtual Substrates
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p445)
• Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
  Published in: Silicon Carbide and Related Materials 2001 (p419)
• Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
  Published in: Silicon Carbide and Related Materials 2003 (p731)
• Progress in 4H-SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials 2000 (p21)
• Properties of Transmission Lines on Various SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p1267)