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Articles by author: Thomas Frauenheim

• (10-10)– and (11-20)–Surfaces in 2H–, 4H– and 6H–SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p365)
• A Cause for SiC/SiO₂ Interface States: the Site Selection of Oxygen in SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p535)
• Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
  Published in: Silicon Carbide and Related Materials 2004 (p501)
• Boron Centers in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p455)
• Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
  Published in: Silicon Carbide and Related Materials 2005 (p655)
• Density Functional Based Modelling of 30° Partial Dislocations in SiC
  Published in: Silicon Carbide and Related Materials 2003 (p453)
• Dislocation Structures in Diamond: Density-Functional Based Modelling and High-Resolution Electron Microscopy
  Published in: Defects and Diffusion in Ceramics (p11)
• Electrical Activity of Isolated Oxygen Defects in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p463)
• Influence of Oxygen on the Absorption of Silicon Carbide Nanoparticles
  Published in: Silicon Carbide and Related Materials 2010 (p520)
• Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs
  Published in: Silicon Carbide and Related Materials 2000 (p435)
• Irradiation Experiment Revisited – Stability and Positron Lifetime of Large Vacancy Clusters in Silicon
  Published in: Positron Annihilation - ICPA-12 (p135)
• Nitrogen-Vacancy Complexes in SiC – Final Annealing Products of the Silicon Vacancy?
  Published in: Silicon Carbide and Related Materials - 2002 (p481)
• Point Defects and their Aggregation in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p439)
• Silicon Carbide: A Playground for 1D-Modulation Electronics
  Published in: Silicon Carbide and Related Materials 2005 (p355)
• Structural and Electrical Properties of Threading Dislocations in GaN
  Published in: Defects in Semiconductors 19 (p1203)