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Articles by author: V.I. Shakhovtsov

• Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Published in: Defects in Semiconductors 19 (p1767)
• Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p183)
• EPR and IR Absorption of Defects in Isotopically Enriched Germanium
  Published in: Defects in Semiconductors 18 (p167)
• Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
  Published in: Defects in Semiconductors I (p293)
• Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
  Published in: Defects in Semiconductors 18 (p1385)
• Interstitial Oxygen in Nature and Monoisotopic Germanium
  Published in: Defects in Semiconductors I (p305)
• Intrinsic Gettering of Radiation Defects in Silicon Caused by High-Temperature Oxygen-Containing Defects
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p87)
• IR Absorption in Monoisotopic Germanium
  Published in: Defects in Semiconductors 16 (p425)
• Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
  Published in: Defects in Semiconductors 19 (p47)
• Peculiarities of Behavior of Irradiated Heat-Treated Si
  Published in: Defects in Semiconductors 15 (p165)
• Peculiarities of Display of Multistable Defects in Relaxation Spectroscopy
  Published in: Defects in Semiconductors I (p125)
• Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons
  Published in: Defects in Semiconductors I (p537)
• Reactions between Point Defects in Silicon Doped with Germanium
  Published in: Defects in Semiconductors 18 (p1381)
• The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon
  Published in: Defects in Semiconductors 15 (p1163)
• The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
  Published in: Defects in Semiconductors 19 (p1773)