HomeV.I. Shakhovtsov

Papers by Author: V.I. Shakhovtsov

Paper TitlePage

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon

Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov

1773

Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium

Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov

1767

Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium

Authors: N. Aichele, U. Gommel, K. Lassmann, F. Maier, F. Zeller, Eugene E. Haller, K.M. Itoh, Lyudmila I. Khirunenko, V.I. Shakhovtsov, B. Pajot, E. Fogarassy, Hans Joachim Müssig

Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium

Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov

183

Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si

Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.I. Yashnik

1385

Reactions between Point Defects in Silicon Doped with Germanium

Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov, V.I. Yashnik

1381

EPR and IR Absorption of Defects in Isotopically Enriched Germanium

Authors: Lyudmila I. Khirunenko, N.A. Tripachko, V.I. Shakhovtsov, V.I. Yashnik, V.V. Shumov

167

Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons

Authors: V.B. Nejmash, Yu.V. Pomozov, V.I. Shakhovtsov, A.N. Cabaldin, L.R. Malko, V.M. Tsmots

537

Interstitial Oxygen in Nature and Monoisotopic Germanium

Authors: F.M. Vorobkalo, Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.K. Shinkarenko

305

Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon

Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.K. Shinkarenko, V.I. Yashnik

293