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Articles by author: Vijay Balakrishna

• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• Deep Levels in SiC:V by High Temperature Transport Measurements
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p545)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p77)
• Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p99)
• High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p9)
• SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
  Published in: Silicon Carbide and Related Materials 2007 (p77)
• The Formation of Super-Disolcation/Micropipe Complexes in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p371)
• Thermal Activation Energies for the Three Inequivalent Lattice Sites for the B_Si Acceptor in 6H-SiC
  Published in: Defects in Semiconductors 19 (p691)