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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: W.C. Mitchel
27 papers on 2 pages:
1
[2]
[next]
Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering
Published in:
Silicon Carbide and Related Materials - 1999
(p841)
Deep Level near E
C
– 0.55 eV in Undoped 4H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2005
(p505)
Deep Level Point Defects in Semi-Insulating SiC
Published in:
Silicon Carbide and Related Materials 2005
(p517)
Deep Levels in SiC:V by High Temperature Transport Measurements
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p545)
Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy
Published in:
Silicon Carbide and Related Materials 2005
(p509)
Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p499)
Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with Silicon and Magnesium Doped InGaN
Published in:
Defects in Semiconductors 19
(p1229)
EPR, ESE and Pulsed ENDOR Study of Nitrogen Related Centers in 4H-SiC Wafers Grown by Different Technologies
Published in:
Silicon Carbide and Related Materials 2006
(p355)
Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
Published in:
Silicon Carbide and Related Materials 2005
(p617)
GaN Doped with Sulfur
Published in:
Defects in Semiconductors 19
(p1161)
GaN Grown Using Trimethylgallium and Triethylgallium
Published in:
Defects in Semiconductors 19
(p1081)
Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide
Published in:
Silicon Carbide and Related Materials - 1999
(p703)
MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC
Published in:
Silicon Carbide and Related Materials - 1999
(p707)
Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC
Published in:
Silicon Carbide and Related Materials 2005
(p863)
Ohmic Contacts on p-Type SiC Using Al/C Films
Published in:
Silicon Carbide and Related Materials 2005
(p899)
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