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Articles by author: William M. Vetter

• A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers
  Published in: Silicon Carbide and Related Materials 2001 (p443)
• Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p231)
• Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
  Published in: Silicon Carbide and Related Materials - 2002 (p213)
• Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p443)
• Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p251)
• Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
  Published in: Silicon Carbide and Related Materials 2001 (p455)
• Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2001 (p391)
• Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p411)
• Synchrotron White Beam Topography Studies of 2H SiC Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p465)
• Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet
  Published in: Silicon Carbide and Related Materials - 1999 (p469)
• Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p247)
• The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p1)
• X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers
  Published in: Silicon Carbide and Related Materials - 1999 (p473)