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Articles by author: Wolfgang Schröter

• Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering
  Published in: Defects in Semiconductors 14 (p151)
• Electrical Activity of Dislocations in Si Decorated by Ni
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p361)
• Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p213)
• Electrical Properties of Clustered and Precipitated Iron in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p109)
• Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p617)
• Formation and Properties of Metastable Silicide Precipitates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p283)
• Impact of Hydrogenation on Electrical Properties of NiSi₂ Precipitates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p279)
• Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi₂-Precipitates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p293)
• Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p553)
• Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects
  Published in: Defect Interaction and Clustering in Semiconductors (p67)
• Investigation of the Defect Distribution in Polycrystalline Silicon
  Published in: Polycrystalline Semiconductors III (p243)
• Phosphorus Diffusion Gettering of Metallic Impurities in Silicon: Mechanisms beyond Segregation
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p527)
• Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C
  Published in: Defects in Semiconductors 14 (p169)
• Structural and Electrical Properties of NiSi₂ Particles in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p359)
• Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p417)