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Articles by author: Y. Shi

• Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p849)
• Effects of Al-C Ion-Implantation and Annealing in Epitaxial 6H-SiC Studied by Structural and Optical Techniques
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p693)
• Machine Vision and Data Reconstruction for Measuring Free Form Surface
  Published in: Advances in Materials Manufacturing Science and Technology (p508)
• Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C
  Published in: Defects in Semiconductors 18 (p157)
• Simulation of the MOCVD Reactor for ZnO Growth
  Published in: PRICM-5 (p1833)
• Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire
  Published in: PRICM-5 (p1693)