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Articles by author: Yves Monteil

• 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
  Published in: Silicon Carbide and Related Materials - 1999 (p1467)
• Aluminium Doping of 4H-SiC Grown with HexaMethylDiSilane
  Published in: Silicon Carbide and Related Materials 2004 (p121)
• Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p85)
• Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
  Published in: Silicon Carbide and Related Materials 2004 (p555)
• Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials 2006 (p65)
• Characterization of 3C-SiC/SOI Deposited with HMDS
  Published in: Silicon Carbide and Related Materials - 1999 (p599)
• Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
  Published in: Silicon Carbide and Related Materials - 2002 (p165)
• Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p265)
• Comparative Evaluation of Free-Standing 3C-SiC Crystals
  Published in: Silicon Carbide and Related Materials 2004 (p229)
• Comparative Studies of <0001> 4H-SiC Layers Grown with Either Silane or HexaMethylDisilane / Propane Precursor Systems
  Published in: Silicon Carbide and Related Materials 2003 (p217)
• Comparison between Ar and N₂ for High-Temperature Treatment of 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p119)
• Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism
  Published in: Silicon Carbide and Related Materials 2003 (p245)
• Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2003 (p1561)
• Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements
  Published in: Silicon Carbide and Related Materials 2003 (p775)
• Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
  Published in: Silicon Carbide and Related Materials 2005 (p1563)