Keyword: "Dangling Bond"
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SiC/SiO2 Interface States: Properties and Models

Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans

563

(11-20) Face Channel MOSFET with Low On-Resistance

Authors: Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda

1119

A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces

Authors: N. Sieber, Thomas Seyller, Lothar Ley, M. Polcik, D. James, J.D. Riley, R.C.G. Leckey

713

Analytical Model for Recombination Mechanism in Amorphous Silicon P-I-N Solar Cell

Authors: S.R. Dhariwal, B.M. Deoraj, S. Rajvanshi

241

Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon

Authors: J.P. Kleider, C. Longeaud

597

Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes

Authors: D.M. Hofmann, B.K. Meyer, P. Christmann, T. Wimbauer, W. Stadler, A. Nikolov, A. Scharmann, A. Hofstätter

1673

EB Induced Stress Relaxation of Tight Network Structure in Silica and Soda Glasses

Authors: Yoshitake Nishi, Naoki Yamaguchi, Kousuke Takahashi, Kazuya Oguri, Akira Tonegawa

385

Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor

Authors: T. Umeda, K. Esaki, Ryouji Kosugi, Kenji Fukuda, Norio Morishita, Takeshi Ohshima, Junichi Isoya

370

Identification of VH in Silicon by EPR

Authors: P. Johannesen, J.R. Byberg, Brian Bech Nielsen, Peter Stallinga, K. Bonde Nielsen

515

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Authors: Qamar-ul Wahab, E.B. Macák, Jie Zhang, Lynnette D. Madsen, Erik Janzén

691

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