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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Dangling Bond
»
25 papers on 2 pages:
1
[2]
[next]
SiC/SiO
2
Interface States: Properties and Models
Published in:
Silicon Carbide and Related Materials 2004
(p563)
(11-20) Face Channel MOSFET with Low On-Resistance
Published in:
Silicon Carbide and Related Materials 2007
(p1119)
A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces
Published in:
Silicon Carbide and Related Materials 2001
(p713)
Analytical Model for Recombination Mechanism in Amorphous Silicon P-I-N Solar Cell
Published in:
Disordered Materials
(p241)
Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
Published in:
Hydrogenated Amorphous Silicon
(p597)
Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes
Published in:
Defects in Semiconductors 18
(p1673)
EB Induced Stress Relaxation of Tight Network Structure in Silica and Soda Glasses
Published in:
New Frontiers of Processing and Engineering in Advanced Materials
(p385)
Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistor
Published in:
Silicon Carbide and Related Materials 2010
(p370)
Identification of VH in Silicon by EPR
Published in:
Defects in Semiconductors 19
(p515)
Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
Published in:
Silicon Carbide and Related Materials 2000
(p691)
Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS
2
Chalcopyrite Semiconductors
Published in:
Defects in Semiconductors 18
(p1667)
Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects
Published in:
Defect Interaction and Clustering in Semiconductors
(p67)
Mechanism of Ultrasonic Enhanced Hydrogenation in Poly-Si Thin Films
Published in:
Defects in Semiconductors 19
(p197)
Mechanisms of the Reversible Electrochemical Insertion of Lithium Occuring with NCIM
s
(Nano-Crystallite-Insertion-Materials)
Published in:
Soft Chemistry Routes to New Materials
(p217)
Modelling and Optimisation of Poly-Si Thin Film Transistors for Flat Panel Displays
Published in:
Polycrystalline Semiconductors III
(p571)
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