HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Deep Level Defect»

• A First-Principles Study of Mg-Related Defects in GaN
  Published in: Defects in Semiconductors 19 (p1137)
• Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
  Published in: Defects and Diffusion in Semiconductors (p81)
• Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p211)
• Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p509)
• High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
  Published in: Silicon Carbide and Related Materials 2007 (p103)
• Identification of Deep Level Defects in SiC Bipolar Junction Transistors
  Published in: Silicon Carbide and Related Materials 2005 (p567)
• Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p371)
• Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p175)
• Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
  Published in: Silicon Carbide and Related Materials 2005 (p461)
• Metastable Defects in N-Type GaAs Related to Hydrogen
  Published in: Defects in Semiconductors 17 (p873)
• Sintering Effects of ZnO Nanopowders Synthesized by Solution–Combustion Method
  Published in: Eco-Materials Processing & Design VI (p221)
• Study of Surface Conduction Related Effects in GaAs MESFET's
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p431)
• The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
  Published in: Silicon Carbide and Related Materials 2007 (p397)