Papers by Keyword: Depth Profiling

Abstract: Possibilities for depth resolving texture analysis applying energy-dispersive X-ray synchrotron diffraction are presented. Exploiting the advantage of having the complete diffraction spectra observed in a fixed but arbitrary measuring direction, two different approaches for high spatial resolution analyses are discussed. The first allows fast access of intensity distribution from plan families {hkl} parallel to the sample surface. The latter allows successful pole figure assessment despite the complex and time consuming slit alignment and data processing. The size of the sampling volume can be tailored to the sample problem ranging from 10 to 100 µm in height or more if necessary.

Abstract: The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

Abstract: This article involves computer simulation and surface analysis by nuclear techniques, which are non-destructive. The “energy method of analysis” for nuclear reactions and elastic scattering is used. Energy spectra are computer simulated and compared with experimental data, giving target composition and concentration profile information. The method is successfully applied to depth profiling of 18O and 12C nuclei in thick targets through the 18O(p,α0)15N and 12C(d,p0)13C reactions, respectively. Similarly, elastic scattering of (4He)+ ions is applied to determination of concentration profiles of O and Al for a thick target containing a thin film of aluminium oxide.

Abstract: X-ray standing wave technique has been used to measure the kinetics of CoSi intermetallic phase growth in a-Si/Co/a-Si sandwich structure. The a-Si/Co/a-Si arrangement were placed into a waveguide structure formed by two Ta films. X-ray fluorescence and extended X-ray absorption fine structure analysis has been used in a combination with X-ray standing wave technique for depth profiling with sub-nanometer resolution of specimens annealed at 493K for different annealing time. The position and the thickness of the growing CoSi intermetallic phase have been monitored.

Abstract: High temperature heat treatment of aluminium alloys causes surface enrichment of the trace elements in Group IIIA - VA, specifically the low melting point elements Pb, Bi, In and Sn. The phenomenon has practical significance in promoting certain types of localised corrosion, such as galvanic and filiform corrosion, while mitigating other types, such as pitting corrosion of the bare surface. The purpose of this paper is to investigate the surface enrichment and microstructure of indium relative to the available data for Pb. Model binary AlIn alloys, containing 20-1000 ppm of In, were used after heat treatment at various temperatures. In addition to electrochemical investigations, the microstructures were characterised by field emission scanning electron microscopy (FEG SEM) and field emission transmission electron microscopy (FEG TEM). Heat treatment at temperatures as low as 300°C gave significant segregation of In as opposed to 600°C for Pb. As a result of this and yet unresolved oxide film breakdown mechanism on aluminium, In was significantly more effective than Pb in anodically activating aluminium. These results suggest the possibility that significant activation earlier observed on certain commercial alloys as a result of low temperature heat treatment may be due to the trace elements In.

Abstract: The concentration of nitrogen and phosphorous in SiC bulk material and epitaxial layers was investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). The advantage of TOF-SIMS of acquiring a complete mass spectrum in a single run was used to identify the most sensitive atomic ion or ionic cluster for the selected element to be monitored. For the investigation of N with its intrinsic low ionization yield the use of a Cs containing cluster ion is necessary. Selection of a CNCs2 + cluster allows to reach a detection limit of about cN,min » 5×1016 cm-3. In the case of P the elemental ion was used. However, the adjacent mass of 30SiH influences the P peak as well as its background and has to be suppressed. This can be achieved by limiting the residual gas re-adsorption during the measurement resulting in a detection limit of about cP,min » 5×1015 cm-3. These measurement parameters were used to investigate a single crystal SiC bulk sample grown by the modified Lely method with intentional P doping and an N doped epitaxial SiC layer sample.

Abstract: On evaluating lattice strain-depth or stress-depth profiles with X-ray diffraction, the variation of the information depth while combining various tilt angles, in combination with lattice spacing gradients leads to artefacts, so-called ghost or fictitious stresses. X-ray diffraction lattice-strain analysis was simulated for a model stress-depth profile combined with a composition-depth profile. Two principally different methods were investigated for the reconstruction of the actual stress and composition profiles from the simulated data: - considering the stress/strain determined at a specific depth as a weighted average over the actual stress/strain depth profile - considering the lattice spacing determined at a specific depth, for a specific value for as a weighted average over the actual lattice spacing profile for this direction. On the basis of the results it is possible to propose a preferred method for the evaluation of stress/strain and composition profiles, while minimising the risk for ghost stresses.