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Articles by keyword: «Gate Dielectrics»

• Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
  Published in: Ultra Clean Processing of Silicon Surfaces V (p177)
• Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C
  Published in: Silicon Carbide and Related Materials - 1999 (p1137)
• Dependence of the Dielectric Properties of Pt/ZrO₂/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature
  Published in: Eco-Materials Processing and Design VIII (p937)
• Improvement of C-V Characteristics and Control of Interlayer Growth of Rare Earth Oxide Stabilized Zirconia Epitaxial Gate Dielectrics
  Published in: Electroceramics in Japan VI (p137)
• Improving 4H-SiC/SiO₂ Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO₂ and Annealing
  Published in: Silicon Carbide and Related Materials 2001 (p993)
• Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor
  Published in: Advanced Materials Research II (p1341)
• SiC MISFETs with MBE-grown AlN Gate Dielectric
  Published in: Silicon Carbide and Related Materials - 1999 (p1315)