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Articles by keyword: «Hot-Wall CVD»

• 3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor
  Published in: Silicon Carbide and Related Materials - 1999 (p149)
• 3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction
  Published in: Silicon Carbide and Related Materials - 1999 (p153)
• Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p95)
• Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
  Published in: Silicon Carbide and Related Materials 2001 (p203)
• Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
  Published in: Silicon Carbide and Related Materials 2001 (p207)
• Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
  Published in: Silicon Carbide and Related Materials 2005 (p135)
• CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p255)
• Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
  Published in: Silicon Carbide and Related Materials - 2002 (p463)
• Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2006 (p89)
• Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
  Published in: Silicon Carbide and Related Materials 2005 (p219)
• Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p141)
• Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p105)
• Growth and Characterisation of SiC Power Device Material
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p97)
• Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
  Published in: Silicon Carbide and Related Materials 2001 (p191)
• Growth of 3C-SiC on Si Molds for MEMS Applications
  Published in: Silicon Carbide and Related Materials 2005 (p307)