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Papers by Keyword: Implantation Damage

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Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal

Authors: Robert E. Stahlbush, Nadeemullah A. Mahadik, Q. Jon Zhang, Albert A. Burk, Brett A. Hull, Jonathan Young

Abstract: Basal plane dislocations (BPDs) introduced into SiC epitaxial layers, 25 μm thick, by the combination of implantation and activation anneal are directly observed by ultraviolet photoluminescence (UVPL) imaging. BPD loops appear to originate at micron-sized or smaller areas at the surface. These loops expand by gliding along the basal plane in the offcut direction until the loops approach the substrate. The loops can glide perpendicular to the offcut direction by many millimeters.

387

Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction

Authors: Jean Camassel, Hervé Peyre, D.J. Brink, Marcin Zielinski, Servane Blanqué, Narcis Mestres, Philippe Godignon

941

Dislocation Generation in Device Fabrication Process

Authors: Isabella Mica, Maria Luisa Polignano, G.P. Carnevale, Aldo Armigliato, R. Balboni, M. Brambilla, F. Cazzaniga, Giuseppe Pavia, V. Soncini

439

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N⁺ and P⁺ Ions in 6H-SiC

Authors: Servane Blanqué, R. Pérez, Marcin Zielinski, Julien Pernot, Narcis Mestres, Jordi Pascual, Philippe Godignon, Jean Camassel

653

Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC

Authors: Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki