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Articles by keyword: «Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)»

• (11-20) Face Channel MOSFET with Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1119)
• ‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p291)
• 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
  Published in: Silicon Carbide and Related Materials 2008 (p757)
• 1400 V 4H-SiC Power MOSFETs
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p989)
• 4.3 mΩcm², 1100 V 4H-SiC Implantation and Epitaxial MOSFET
  Published in: Silicon Carbide and Related Materials 2005 (p1281)
• 400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200ºC Baseplate Temperature
  Published in: Silicon Carbide and Related Materials 2005 (p1445)
• 4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
  Published in: Silicon Carbide and Related Materials 2001 (p1215)
• 4H-SiC Delta-Doped Accumulation-Channel MOS FET
  Published in: Silicon Carbide and Related Materials 2001 (p1077)
• 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
  Published in: Silicon Carbide and Related Materials - 2002 (p753)
• 4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p805)
• 4H-SiC MOSFETs on (03-38) Face
  Published in: Silicon Carbide and Related Materials 2001 (p1065)
• 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm²/Vs
  Published in: Silicon Carbide and Related Materials 2003 (p1417)
• 4H-SiC MOSFETs Using Thermal Oxidized Ta₂Si Films as High-k Gate Dielectric
  Published in: Silicon Carbide and Related Materials 2004 (p713)
• 4H-SiC MOSFETs with a Novel Channel Structure (Sandwiched Channel MOSFET)
  Published in: Silicon Carbide and Related Materials 2003 (p1409)
• 5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm²
  Published in: Silicon Carbide and Related Materials 2001 (p1199)