Keyword: "Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)"
Papers by keyword:
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(11-20) Face Channel MOSFET with Low On-Resistance

Authors: Eiichi Okuno, Takeshi Endo, Jun Kawai, Toshio Sakakibara, Shoichi Onda

1119

‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC

Authors: Kuniaki Yagi, Takamitsu Kawahara, Naoki Hatta, Hiroyuki Nagasawa

291

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face

Authors: Masato Noborio, Jun Suda, Tsunenobu Kimoto

757

1400 V 4H-SiC Power MOSFETs

Authors: Anant K. Agarwal, Jeff B. Casady, L.B. Rowland, W.F. Valek, C.D. Brandt

989

4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET

Authors: Shinsuke Harada, Makoto Kato, Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai

1281

400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200ºC Baseplate Temperature

Authors: Jim Richmond, Sei Hyung Ryu, Sumi Krishnaswami, Anant K. Agarwal, John W. Palmour, Bruce Geil, Dimos Katsis, Charles J. Scozzie

1445

4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching

Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami

1215

4H-SiC Delta-Doped Accumulation-Channel MOS FET

Authors: Toshiya Yokogawa, Kunimasa Takahashi, Osamu Kusumoto, Masao Uchida, Kenya Yamashita, Makoto Kitabatake

1077

4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda

753

4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates

Authors: Mitsuo Okamoto, Seiji Suzuki, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda

805

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