Papers by Keyword: RTCVD

Abstract: The role of single wafer Rapid Thermal Processing (RTP) in semiconductor manufacturing has been steadily expanding over the last 2 decades. There are several reasons for the successful adaptation of this technology. These include more critical requirements by advanced semiconductor technologies with respect to thermal exposure and control, as well as tremendous improvements by the RTP equipment community in resolving some fundamental limitations of the tooling, historically restricting wide spread implementation. From rather humble beginnings, RTP technology has now established itself as indispensable to the production of advanced semiconductor products. We review the history and implementation of RTP technology in semiconductor processing technology at International Business Machines Corporation (IBM) from the late 1980s to recent time.

Abstract: The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.

Abstract: Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.

Abstract: Various polycrystalline silicon thin films were deposited on Al2O3 ceramic substrates by RTCVD processing under different deposition conditions. The influence of deposition conditions on thin film quality was studied and a set of typical processing parameters were obtained, which would direct the RTCVD processing of thin film silicon solar cell technique.