| Paper Title | Page |
|---|---|
|
4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O Authors: Amador Pérez-Tomás, Dominique Tournier, Phillippe Godignon, Narcis Mestres, José Millán |
673 |
|
Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC Authors: Francisco M. Morales, S.I. Molina, Daniel Araújo, Volker Cimalla, Jörg Pezoldt |
285 |
|
Authors: Joong S. Jeon, Bob Ogle |
165 |
|
Authors: Hai Feng Li, Yong Huang, Zhi Jian Wan, Hou Xing Zhang, Y. Xu |
1231 |
|
Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells Authors: Hai Feng Li, Yong Huang, Zhi Jian Wan, Hou Xing Zhang, Li Ming Zhang, Y. Xu, Xiao Dong Li |
1147 |
|
Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates Authors: Francisco M. Morales, A. Ponce, S.I. Molina, Daniel Araújo, R. García, J. Ristic, M.-A. Sánchez-García, Enrique Calleja, Volker Cimalla, Jörg Pezoldt |
1003 |
|
The Expanding Role of Rapid Thermal Processing in CMOS Manufacturing Authors: Jim Nakos, Joe Shepard |
3 |