Papers by Keyword: Self-Interstitial

Abstract: We report on the energetics, electrical and optical activity of small self-interstitial (I3 and I4) clusters in Si, found from ab-initio density-functional modeling studies. I4 possesses nine local vibrational modes above the Raman edge, which account for up to three dipole-allowed vibronic transitions observed in recent experiments associated with the X-photoluminescent line. Another prominent photoluminescent line (known as the W-line) that shows a trigonal stress-induced splitting pattern, has been previously assigned to I3. Our analysis of the LVMs of a metastable form of I3 support this assignment.

Abstract: There are several phenomena where the properties of vacancies and self-interstitials in silicon are manifested in straightforward ways. These include the formation of grown-in microdefects, the diffusion of metals (such as Au, Zn), self-diffusion and the installation of vacancy depth profiles in wafers by Rapid Thermal Annealing. Combining features extracted from the analysis of these phenomena, it is possible to define the diffusivities and equilibrium concentrations of the intrinsic point defects. Their diffusivities are remarkably high, and have weak temperature dependence. Their equilibrium concentrations are very low, and have strong temperature dependence.

Abstract: We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the ntype Si(100) wafers. The diffusion profiles of this kind are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the layers of microdefects, which are produced by previous oxidation. These layers appear to be passivated during short-time diffusion of boron thereby forming neutral d - barriers. The fractal type selfassembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which represents the system of microcavities embedded in the quantum well plane.