Papers by Keyword: Single Crystal Growth

Abstract: Bi porous films were prepared via a simple process which involves solvothermal or thermal treatment of Bi(NO3)3 and alumina membranes. The reducing reagent is helpful for the growth of Bi in the channels of alumina templates. However, Bi networked X-shape nanowires would form when the reaction was carried out under vacuum system. This method has been successfully applied to the synthesis of other porous metal film. The pressure, reducing reagent and starting materials play a key role in the growth of Bi films. A possible formation mechanism of Bi films and nanowires is proposed.

Abstract: Using a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution x-ray diffraction (HRXRD), the structural quality of AlN crystals grown by various sublimation-based techniques have been non-destructively analyzed. Spontaneously nucleated AlN crystals are characterized by very low defect densities but their size is small. Self-seeding results in nucleation of multiple grains of different orientations, a few of which are of good quality while most are highly strained. Using readily available commercial 4H and 6H-SiC substrates, several growth runs have been carried out using different growth conditions to obtain thick AlN layers, either attached to the seed or free-standing. While attached layers are typically cracked and highly strained, crack-free free-standing layers can be obtained by delamination or SiC decomposition. X-ray characterization reveals these crystals have good purity but moderately high defect densities.

Abstract: Growth rates and relative stability of 6H- and 4H-SiC have been studied as a function of growth conditions during Halide Chemical Vapor Deposition (HCVD) process using silicon tetrachloride, propane and hydrogen as reactants. The growth temperature ranged from 2000 to 2150 oC. Silicon carbide crystals were deposited at growth rates in the 100-300 μm/hr range in both silicon- and carbon-supply limited regimes by adjusting flows of all three reactants. High resolution x-ray diffraction measurements show that the growth on Si-face of 6H- and C-face of 4H-SiC substrates resulted in single crystal 6H- and 4H-SiC polytype, respectively. The growth rate results have been interpreted using thermodynamic equilibrium calculations.

Abstract: Planar defects have been found in nitrogen doped 2" 4H-SiC crystals grown on off-axis seeds. The doping level was 1×1019cm-3, which is below the critical one for the thermally activated cubic stacking fault formation in the 4H matrix. Planar defects in the doped region are nucleated on the whole seed surface outside the growth facet. They are coexisting 15R and 6H lamellas of unitcell height as revealed by means of luminescence and high resolution transmission electron microscopy. These inclusions are preferably formed at the rim of the growth facet, where polytype change occurs after switching off the nitrogen flow during growth.

Abstract: Relaxor-based piezoelectric single crystals of lead indium niobate-lead titanate (0.63Pb(In1/2Nb1/2)-0.37PbTiO3, abbreviated as PIN-PT), in the vicinity of the morphotropic phase boundary, were prepared by a flux method. The compositions of the flux, Pb3O4 or PbF2, play different role in perovskite stability and phase development. Thus, pure perovskite PIN-PT single crystals with the size of 2~5 mm were obtained by using Pb3O4 flux as well as a small amount of B2O3 additive. The microstructure and the phase development of the as-grown single crystals were investigated by scanning electron microscopy and transmission electron microscopy and X-ray diffraction. Furthermore, the dielectric properties of the <100>-oriented PIN-PT single crystals were measured in the temperature range between 20°C and 400°C.