| Paper Title | Page |
|---|---|
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1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson |
1151 |
|
A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Einar Ö. Sveinbjörnsson |
631 |
|
Authors: Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro |
821 |
|
Authors: L.A. Kosyachenko, V.M. Sklyarchuk, Ye.F. Sklyarchuk, K.S. Ulyanitsky |
315 |
|
Current Gain Dependence on Emitter Width in 4H-SiC BJTs Authors: Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner |
1425 |
|
Authors: Vytautas Grivickas, Jan Linnros, Augustinas Galeckas |
529 |
|
Authors: Simona Spadoni, Maurizio Acciarri, G. Barbi, Sergio Pizzini |
123 |
|
Evaluation of Auger Recombination Rate in 4H-SiC Authors: Augustinas Galeckas, Jan Linnros, Vytautas Grivickas, Ulf Lindefelt, Christer Hallin |
533 |
|
Laser Induced Mapping for Separation of Bulk and Surface Recombination Authors: H.-C. Ostendorf, A.L. Endrös |
33 |
|
Authors: Philip G. Neudeck, C. Fazi |
1037 |