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Articles by keyword: «Surface Recombination»

• 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
  Published in: Silicon Carbide and Related Materials 2007 (p1151)
• A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
  Published in: Silicon Carbide and Related Materials 2006 (p631)
• A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT
  Published in: Silicon Carbide and Related Materials 2008 (p821)
• Charge Transport and Photoelectric Processes in Polycrystalline Cadmium Telluride Surface-Barrier Structures
  Published in: Polycrystalline Semiconductors V (p315)
• Current Gain Dependence on Emitter Width in 4H-SiC BJTs
  Published in: Silicon Carbide and Related Materials 2005 (p1425)
• Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p529)
• Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
  Published in: Beam Injection Assessment of Defects in Semiconductors (p123)
• Evaluation of Auger Recombination Rate in 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p533)
• Laser Induced Mapping for Separation of Bulk and Surface Recombination
  Published in: Beam Injection Assessment of Defects in Semiconductors (p33)
• Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1037)
• Solar Cells and Modules Made from a-Si:H - Physics and Technology
  Published in: Hydrogenated Amorphous Silicon (p823)
• Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p203)