Keyword: "Surface Recombination"
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1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson

1151

A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain

Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Einar Ö. Sveinbjörnsson

631

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Authors: Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro

821

Charge Transport and Photoelectric Processes in Polycrystalline Cadmium Telluride Surface-Barrier Structures

Authors: L.A. Kosyachenko, V.M. Sklyarchuk, Ye.F. Sklyarchuk, K.S. Ulyanitsky

315

Current Gain Dependence on Emitter Width in 4H-SiC BJTs

Authors: Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner

1425

Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters

Authors: Vytautas Grivickas, Jan Linnros, Augustinas Galeckas

529

Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration

Authors: Simona Spadoni, Maurizio Acciarri, G. Barbi, Sergio Pizzini

123

Evaluation of Auger Recombination Rate in 4H-SiC

Authors: Augustinas Galeckas, Jan Linnros, Vytautas Grivickas, Ulf Lindefelt, Christer Hallin

533

Laser Induced Mapping for Separation of Bulk and Surface Recombination

Authors: H.-C. Ostendorf, A.L. Endrös

33

Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties

Authors: Philip G. Neudeck, C. Fazi

1037

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