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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
Thermal Oxide
»
14 papers on 1 page:
1
A Long-Term Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Published in:
Silicon Carbide and Related Materials 2003
(p1269)
Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
Published in:
Silicon Carbide and Related Materials 2006
(p635)
Challenges of High-Performance and High-Reliablity in SiC MOS Structures
Published in:
Silicon Carbide and Related Materials 2011
(p703)
Characterization of Emitter Interface Oxide Growth in a Vertical LPCVD Polysilicon Deposition Reactor
Published in:
Ultra Clean Processing of Silicon Surfaces IV
(p123)
Comparison of Gold Particle Removal from Fused Silica and Thermal Oxide Surfaces in Dilute Ammonium Hydroxide Solutions
Published in:
Ultra Clean Processing of Semiconductor Surfaces X
(p159)
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4
H
-SiC Epitaxial Wafers
Published in:
Silicon Carbide and Related Materials 2007
(p775)
Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Published in:
Silicon Carbide and Related Materials 2004
(p661)
Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer
Published in:
Silicon Carbide and Related Materials 2010
(p378)
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Published in:
Silicon Carbide and Related Materials - 2002
(p725)
Gate-Area Dependence of SiC Thermal Oxides Reliability
Published in:
Silicon Carbide and Related Materials 2007
(p787)
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
Published in:
Silicon Carbide and Related Materials 2005
(p999)
Reliability of Thermal Oxides Grown on n-Type 4H-SiC Implanted with Low Nitrogen Concentration
Published in:
Silicon Carbide and Related Materials 2007
(p779)
TDDB Measurement of Gate SiO
2
on 4H-SiC Formed by Chemical Vapor Deposition
Published in:
Silicon Carbide and Related Materials 2007
(p799)
Thermal Evolution of (100) Silicon and Chemical Oxides as Seen by ATR Spectroscopy
Published in:
Ultra Clean Processing of Silicon Surfaces VI
(p183)
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