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Papers by Keyword: Vacancy

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Energy of Vacancy Formation and Migration of Two Σ5 Tilt Grain Boundaries in Ni₃Al Intermetallic: a Monte Carlo Simulation Study

Authors: Jiří Čermák

161

Stress-Induced Redistribution of Point Defects in Silicon Device Structures

Authors: K.V. Loiko, I.V. Peidous, T.E. Harrington, W.R. Frensley

225

Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects

Authors: Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca

81

Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers

Authors: A. Karoui, F.S. Karoui, De Ren Yang, George A. Rozgonyi

69

Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior

Authors: Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka

25

On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals

Authors: Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf

17

Vacancies near to Metal Surfaces: Formation Energy and Interlayer Migration

Authors: F. Willaime, Y. Piquet, B. Legrand

1381

Grain Boundary Porosity in NiAl Induced by Cu Diffusion

Authors: Eugen Rabkin, Leonid Klinger, T. Izyumova, V.N. Semenov

1191

Simulation of Diffusion Mechanisms in Ordered Structures

Authors: Mariya G. Ganchenkova, Andrei V. Nazarov

429

Hybrid Impurity and Self-Diffusion in GaAs and Related Compounds: Recent Progress

Authors: Nicolaas Stolwijk, G. Bösker, J. Pöpping

687