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Articles by keyword: «Vacancy»

• Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p295)
• Vacancy Formation and Diffusion in FeAl-Alloys
  Published in: Diffusion in Materials DIMAT2000 (p389)
• Vacancy Jumps in PdIn: Reconciling Nuclear Relaxation and Diffusion Measurements
  Published in: Diffusion in Materials DIMAT2000 (p375)
• Vacancy Model for Threshold Electromigration in Thin Metallic Films
  Published in: Diffusion in Materials DIMAT2000 (p55)
• Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
  Published in: Defects in Semiconductors 17 (p1099)
• Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy
  Published in: Defects in Semiconductors 18 (p1249)
• Vacancy-Assisted Oxygen Precipitation Phenomena in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p129)
• Vacancy-Hydrogen Interaction in Proton-Implanted Si Studied by Positron Lifetime and Infrared Absorption Measurements
  Published in: Positron Annihilation - ICPA-11 (p548)
• Vacancy-Oxygen Complexes in Si Probed by Positron Annihilation
  Published in: Positron Annihilation - ICPA-10 (p553)
• Vacancy-Type Defects in Iron-Pyrite FeS_2-x
  Published in: Positron Annihilation - ICPA-11 (p342)
• Vacancy-Type Defects in SrTiO₃ Probed by a Monoenergetic Positron Beam
  Published in: Positron Annihilation - ICPA-13 (p201)
• Vacancy-Vacancy Interactions in NiAl
  Published in: Diffusion in Materials DIMAT2000 (p383)
• Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions
  Published in: Positron Annihilation - ICPA-9 (p1471)
• VO_n (n≥3) Defects in Irradiated and Heat-Treated Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p267)