Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding

Abstract:

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In this paper, silicon direct bonding was performed by two different cleaning processes, and the bonding quality was obtained by tensile test and IR test. For (100) P-type double side polished wafer, the optimum process condition was established with respect to the results of two different cleaning processes. The cleaning process of NH3•H2O/H2O2/H2O (Standard Cleaning 1, SC1) after the H2SO4/H2O2 (piranha solution) was found to be better suited for high bonding quality. The bonding strength of the SC1-cleaned samples is about 5.4 MPa with partially crack but no more than 0.7 MPa for the only piranha solution cleaned samples.

Info:

Periodical:

Edited by:

Paul P. Lin and Chunliang Zhang

Pages:

1662-1665

DOI:

10.4028/www.scientific.net/AMM.105-107.1662

Citation:

X. Yan et al., "Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding", Applied Mechanics and Materials, Vols. 105-107, pp. 1662-1665, 2012

Online since:

September 2011

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$35.00

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