Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding
In this paper, silicon direct bonding was performed by two different cleaning processes, and the bonding quality was obtained by tensile test and IR test. For (100) P-type double side polished wafer, the optimum process condition was established with respect to the results of two different cleaning processes. The cleaning process of NH3•H2O/H2O2/H2O (Standard Cleaning 1, SC1) after the H2SO4/H2O2 (piranha solution) was found to be better suited for high bonding quality. The bonding strength of the SC1-cleaned samples is about 5.4 MPa with partially crack but no more than 0.7 MPa for the only piranha solution cleaned samples.
Paul P. Lin and Chunliang Zhang
X. Yan et al., "Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding", Applied Mechanics and Materials, Vols. 105-107, pp. 1662-1665, 2012