Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding

Xin Yan; Yan Li Zhao; Hai Sheng San; Yu Xi Yu; Xu Yuan Chen

doi:10.4028/www.scientific.net/AMM.105-107.1662

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 105-107Mechanical Strength Characterization for...

Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding

Abstract:

In this paper, silicon direct bonding was performed by two different cleaning processes, and the bonding quality was obtained by tensile test and IR test. For (100) P-type double side polished wafer, the optimum process condition was established with respect to the results of two different cleaning processes. The cleaning process of NH3•H2O/H2O2/H2O (Standard Cleaning 1, SC1) after the H2SO4/H2O2 (piranha solution) was found to be better suited for high bonding quality. The bonding strength of the SC1-cleaned samples is about 5.4 MPa with partially crack but no more than 0.7 MPa for the only piranha solution cleaned samples.

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Periodical:

Applied Mechanics and Materials (Volumes 105-107)

Pages:

1662-1665

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.105-107.1662

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Online since:

September 2011

Authors:

Xin Yan, Yan Li Zhao, Hai Sheng San, Yu Xi Yu, Xu Yuan Chen

Keywords:

Pulling Speed, Standard Cleaning, Tensile Test, Wafer Direct Bonding

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