Electron Spin in Quantum Hall Effect in Al_xGa_1-xas: D. C. Tsui's Data

Abstract:

The Hall resistivity in the layers of Al_xGa_1-xAs/Al_0.32Ga_0.68As is found to show plateaus at certain fractions which depend on the effective charge. The Hall resistivity formula ρ_xy=h/e² has been modified to ρ_xy=h/[(1/2) ge²] so that the effective charge of the electron becomes, e*=(1/2) ge. The plateaus occur at the effective charge determined by g = (2j+1)/(2l+1). Some of the plateaus are explained to arise from the g values while some others require the use of Landau levels. The flux quantization is modified to include the effect of spin. When the samples are doped with aluminium, the clusters of Al atoms occur in the GaAs resulting into electron clusters in which the spin is NS with S=1/2 and N=101. The electron clusters form a temperature dependent plateau in the Hall resistivity.

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 3097-3102
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.3097
• Online since: October 2011
• Authors: Keshav N. Shrivastava
• Keywords: AlGaAs, Quantum Computation, Quantum Hall Effect, Resistivity

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