Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

Abstract:

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Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Info:

Periodical:

Edited by:

Wu Fan

Pages:

5380-5383

DOI:

10.4028/www.scientific.net/AMM.110-116.5380

Citation:

T. R. Naik et al., "Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications", Applied Mechanics and Materials, Vols. 110-116, pp. 5380-5383, 2012

Online since:

October 2011

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Price:

$35.00

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