Luminescent Property of Al2O3:Ce3+ Thin Films
The Al2O3 films doped with Ce3 + were deposited on slides by the medium-frequency reaction magnetron sputtering process, to which the power is constant, Ar flow rate 70 sccm, O2 flow rate 25~45sccm and sputtering time 90min at room temperature. The relationship between the luminescent properties of Al2O3:Ce3 + films and the doped amount of Ce3 + in the films was studied. The presence of Ce3 + and stoichiometry of those films were determined. It was observed that the total luminescence intensity increases and the peak positions are strongly dependent on Ce3+ concentration in the films. The analysis of luminescent excitation spectra showed that the luminance is due to the Ce3+ concentration in the cerium chloride aggregate formed in the films.
S. F. Yan and K. G. Miao, "Luminescent Property of Al2O3:Ce3+ Thin Films", Applied Mechanics and Materials, Vols. 130-134, pp. 23-26, 2012