A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique

Abstract:

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A 3.1 ~ 10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier (LNA) is proposed. This low noise amplifier utilizes a current-reused technique to increase the gain and extend the bandwidth. We have a detailed analysis for the input matching, noise figure, gain and other features. The LNA was designed with the TSMC 0.35µm bipolar silicon-germanium (SiGe) processes. Simulation results show that the input reflection coefficient is less than-9dB, the output reflection coefficient is less than-10dB, the maximum power gain of 17 dB and the minimum noise factor (NF) of 2.35dB. The total power consumption is 6.2 mW with 2.5V power supply.

Info:

Periodical:

Edited by:

Han Zhao

Pages:

3251-3254

DOI:

10.4028/www.scientific.net/AMM.130-134.3251

Citation:

K. Li et al., "A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique", Applied Mechanics and Materials, Vols. 130-134, pp. 3251-3254, 2012

Online since:

October 2011

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Price:

$35.00

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