A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique
A 3.1 ~ 10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier (LNA) is proposed. This low noise amplifier utilizes a current-reused technique to increase the gain and extend the bandwidth. We have a detailed analysis for the input matching, noise figure, gain and other features. The LNA was designed with the TSMC 0.35µm bipolar silicon-germanium (SiGe) processes. Simulation results show that the input reflection coefficient is less than-9dB, the output reflection coefficient is less than-10dB, the maximum power gain of 17 dB and the minimum noise factor (NF) of 2.35dB. The total power consumption is 6.2 mW with 2.5V power supply.
K. Li et al., "A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique", Applied Mechanics and Materials, Vols. 130-134, pp. 3251-3254, 2012