A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique

Abstract:

A 3.1 ~ 10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier (LNA) is proposed. This low noise amplifier utilizes a current-reused technique to increase the gain and extend the bandwidth. We have a detailed analysis for the input matching, noise figure, gain and other features. The LNA was designed with the TSMC 0.35µm bipolar silicon-germanium (SiGe) processes. Simulation results show that the input reflection coefficient is less than-9dB, the output reflection coefficient is less than-10dB, the maximum power gain of 17 dB and the minimum noise factor (NF) of 2.35dB. The total power consumption is 6.2 mW with 2.5V power supply.

• Periodical: Applied Mechanics and Materials (Volumes 130-134)
• Pages: 3251-3254
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.130-134.3251
• Online since: October 2011
• Authors: Kang Li, Chi Liu, Xiao Feng Yang, Qian Feng, Chao Xian Zhu, Guo Dong Huang
• Keywords: Current-Reuse, Low-Noise-Amplifier (LNA), UWB

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