Preparation and Characteristic Measurement of Born Doped Diamond Film Electrode on Tantalum Substrate and its Properties for Degradation of High COD Wastewater

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The boron-doped diamond film electrode grown on tantalum substrate (BDD/Ta) was prepared by hot filament chemical vapor deposition (HFCVD) technique. The morphology and quality of BDD/Ta film electrode were investigated by SEM and Raman spectroscopy respectively. The electrochemical behavior of the BDD/Ta film electrodes in Na2SO4 solution was also investigated by cyclic voltammetry and the window potential of BDD/Ta film electrode in Na2SO4 solution is of 4.1V, the hydrogen and oxygen evolution potentials are of-1.8V and +2.3V respectively. The characteristic measurements of BDD/Ta film electrode and its application to degradation of high concentration organic wastewater indicated that BDD/Ta film electrode have a series of advantages, including high overpotential for oxygen revolution, high current efficiency, good removal of chemical oxygen demand (COD).

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Periodical:

Edited by:

Honghua Tan

Pages:

612-617

DOI:

10.4028/www.scientific.net/AMM.138-139.612

Citation:

C. Y. Gao "Preparation and Characteristic Measurement of Born Doped Diamond Film Electrode on Tantalum Substrate and its Properties for Degradation of High COD Wastewater", Applied Mechanics and Materials, Vols. 138-139, pp. 612-617, 2012

Online since:

November 2011

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$35.00

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