Progress of Research on Preparation of Micro Gas Sensors of Metal Oxide Semiconductors

Abstract:

New progress of research on the preparation technique of micro gas sensors of metal oxide semiconductors is introduced, such as the chemical treatment of the gas sensing film, the deposited technique of gas sensing film in the oxygen radical assisted EB evaporation, the technique of the multilayered film, the fabrication technique of the thermally oxidized, the technique of the electrode configuration, the fabrication technique of the miniaturized arrays by micro-molding in capillaries, the dip-coating of the sol-gel. And their features will be analyzed respectively, and their existing problems and future development directions will be given.

• Periodical: Applied Mechanics and Materials (Volumes 143-144)
• Pages: 562-566
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.143-144.562
• Online since: December 2011
• Authors: Wen An, Chun Ying Yang
• Keywords: Gas Sensor, Metal-Oxide-Semiconductor (MOS), Preparation, Selectivity, Stability

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