Effect of Ar/O2 Ratio and Substrate Temperature on the Hydrophilicity of SiO2 Thin Films Prepared by RF Reactive Magnetron Sputtering

Song Hua Gao; Li Hua Gao

doi:10.4028/www.scientific.net/AMM.148-149.842

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 148-149Effect of Ar/O2 Ratio and Substrate Temperature on...

Effect of Ar/O₂ Ratio and Substrate Temperature on the Hydrophilicity of SiO₂ Thin Films Prepared by RF Reactive Magnetron Sputtering

Abstract:

SiO₂ thin films were prepared on stainless steel substrate by RF reactive magnetron sputtering. Their microscopic surface morphology was characterized by atomic force microscope (AFM) and static contact Angle (SCA) was applied to evaluate hydrophilicity of films. It was found that SiO₂ thin films showed super hydrophilicity which could last long at Ar/O₂ ratio of 6:4; under such condition, substrate temperature also affects hydrophilicity of films, the best of which can be obtained at 90 °C.

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Periodical:

Applied Mechanics and Materials (Volumes 148-149)

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842-845

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.148-149.842

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Online since:

December 2011

Authors:

Song Hua Gao, Li Hua Gao

Keywords:

Ar/O₂ Ratio, SiO₂ Thin Films, Substrate Temperature, Super Hydrophilicity

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