Effect of Defects on Electrical Property of Multi-Crystalline Silicon

Yi Tan; Ya Qiong Li; Qiang Xu; Yan Jiao Liu; Gen Xiong Hu; Jia Yan Li

doi:10.4028/www.scientific.net/AMM.148-149.947

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 148-149Effect of Defects on Electrical Property of...

Effect of Defects on Electrical Property of Multi-Crystalline Silicon

Abstract:

Multi-crystalline silicon ingot was prepared by directional solidification method using metallurgical grade silicon as raw materials. The influence of impurities and crystalline defects in mc-Si on the minority carrier lifetime and resistivity was investigated. The results indicate that both grain boundary and impurities play important roles in the deterioration of the minority carrier lifetime.

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Applied Mechanics and Materials (Volumes 148-149)

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947-950

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.148-149.947

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Online since:

December 2011

Authors:

Yi Tan, Ya Qiong Li, Qiang Xu, Yan Jiao Liu, Gen Xiong Hu, Jia Yan Li

Keywords:

Defect, Electrical Properties, Impurity, mc-Si

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