Dielectric Properties of Sol-Gel Derived MgAl2O4 Thin Films

Ching Fang Tseng; Cheng Hsing Hsu; Chun Hung Lai

doi:10.4028/www.scientific.net/AMM.151.314

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 151Dielectric Properties of Sol-Gel Derived MgAl2O4...

Dielectric Properties of Sol-Gel Derived MgAl₂O₄ Thin Films

Abstract:

This paper describes microstructure characteristics of MgAl2O4 thin films were deposited by sol-gel method with various preheating temperatures and annealing temperatures. Particular attention will be paid to the effects of a thermal treatment in air ambient on the physical properties. The annealed films were characterized using X-ray diffraction. The surface morphologies of treatment film were examined by scanning electron microscopy and atomic force microscopy. At a preheating temperature of 300oC and an annealing temperature of 700oC, the MgAl2O4 films with 9 μm thickness possess a dielectric constant of 9 at 1 kHz and a dissipation factor of 0.18 at 1 kHz.

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Periodical:

Applied Mechanics and Materials (Volume 151)

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314-318

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.151.314

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Online since:

January 2012

Authors:

Ching Fang Tseng, Cheng Hsing Hsu, Chun Hung Lai

Keywords:

Dielectric Property, MgAl₂O₄ Thin Films, Sol-Gel Method

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