Growth and Characterization of InAs Quantum Dots on GaAsSb

Abstract:

The growth details of strained GaAsSb layers on GaAs(001) substrates were studied by reflection high energy electron diffraction (RHEED) beam intensity oscillations as a function of both substrate temperature and Sb/As flux ratio. Both the RHEED intensity and RHEED oscillation cycles are reduced with decreasing substrate temperature and Sb/As flux ratio. InAs QDs with high dot density, small dot size and narrow size distribution have been achieved on strained GaAs / GaAsSb buffer layer. The average lateral size of dots shows a trend toward to smaller size and dots’ density shows a trend toward to higher density as the surface Sb composition increasing. The QDs with higher density and smaller size distributions at high Sb composition, indicates that the Sb plays an important role in the dot formation under this growth condition. The lattice mismatch of InAs layer with the GaAsSb buffer layer is reduced with increasing of Sb composition in the GaAsSb interlayer. This result indicates that the density, size and size distribution of self-assembled quantum dots (QDs) can be controlled through the manipulation of the Sb-mediated strain field in the lattice mismatched system.

• Periodical: Applied Mechanics and Materials (Volumes 184-185)
• Pages: 1001-1005
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.184-185.1001
• Online since: June 2012
• Authors: Guang Yan Liu, Wen Cai Wang
• Keywords: GaAsSb, InAs, Quantum Dot (QD), Reflection High Energy Electron Diffraction

References

[1] D. Bimberg, M. Grundmann, N.N. Ledentsov, Qutantum Dot Heterostructures, Chichester: Wiley, (1999).

[2] A. Marti, N. Lopez, E. Antolin, E. Canovas, A. Luque, C.R. Stanley, C.D. Farmer, P. Diaz, Emitter degradation in quantum dot intermediate band solar cells, Appl. Phys. Lett. 90 (2007) 233510-233512.

DOI: 10.1063/1.2747195

[3] P.B. Joyce, T.J. Krzyzewski, G.R. Bell, T.S. Jones, S. Malik, D. Childs, R. Murray, Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy, Phys. Rev. B, 62 (2000).

DOI: 10.1103/physrevb.62.10891

[4] Z.M. Wang, S.L. Feng, X.P. Yang, Z.D. Lu, Z.Y. Xu, H.Z. Zheng, F.L. Wang, P.D. Han, X.F. Duan, Effects of growth interruption on self-assembled. InAs/GaAs islands, J. Crystal Growth 192 (1998) 97-101.

DOI: 10.1016/s0022-0248(98)00390-x

[5] T.R. Ramachandran, A. Madhukar, I. Mukhametzhanov, R. Heitz, A. Kalburge, Q. Xie, P. Chen, Nature of Stranski–Krastanow growth of InAs on GaAs(001), J. Vac. Sci. Technol. B 16 (1998) 1330-1333.

DOI: 10.1116/1.590069

[6] K. Yamaguchi, K. Yujobo, T. Kaizu, Stranski-Krastanov Growth of InAs Quantum Dots with Narrow Size Distribution, Jpn. J. Appl. Phys. part 2. 39 (2000) L1245-L1248.

DOI: 10.1143/jjap.39.l1245

[7] K. Nishi, H. Saito, S. Sugou, J.S. Lee, A narrow photoluminescence linewidth of 21 meV at 1. 35 μm from strain-reduced InAs quantum dots covered by In0. 2Ga0. 8As grown on GaAs substrates, Appl. Phys. Lett. 74 (1999) 1111-1113.

DOI: 10.1063/1.123459

[8] K. Yamaguchi, T. Kanto, Self-assembled InAs quantum dots on GaSb/GaAs(0 0 1) layers by molecular beam epitaxy, J. Cryst. Growth, 275 (2005) e2269-e2273.

DOI: 10.1016/j.jcrysgro.2004.11.363

[9] H. Lee, R. Lowe-Webb, W. Yang, P.C. Sercel, Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction, Appl. Phys. Lett. 72 (1998) 812-814.

DOI: 10.1063/1.120901

[10] B.F. Lewis, T.C. Lee, F.J. Grunthaner, A. Madhukar, R. Fernandez, and J. Maserjian, RHEED oscillation studies of kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100), J. Vac. Sci. Technol. B. 2 (1984) 419-423.

DOI: 10.1116/1.582887

[11] T. Nakai, K. Yamaguchi, Analysis of Sb–As Surface Exchange Reaction in Molecular Beam Epitaxy of GaSb/GaAs Quantum Wells, Jpn.J. Appl. Phys., Part 1. 44 (2005) 3803-3807.

DOI: 10.1143/jjap.44.3803

[12] T. Kanto, K. Yamaguchi, In-plane self-arrangement of high-density InAs quantum dots on GaAsSb/GaAs(001) by molecular beam epitaxy, J. Appl. Phys. 101 (2007) 094901-094904.

DOI: 10.1063/1.2717570

[13] M. Ohta, T. Kanto, K. Yamaguchi, Self-Formation of High-Density and High-Uniformity InAs Quantum Dots on Sb/GaAs Layers by Molecular Beam Epitaxy, Jpn.J. Appl. Phys., Part 1. 45 (2006) 3427-3429.

DOI: 10.1143/jjap.45.3427

[14] F. Patella, F. Arciprete, E. Placidi, S. Nufris, M. Fanfoni, A. Sgarlata, D. Schiumarini, A. Balzarotti, Morphological instabilities of the InAs/GaAs(001) interface and their effect on the self-assembling of InAs quantum-dot arrays, Appl. Phys. Lett. 81 (2002).

DOI: 10.1063/1.1508416