Ring-Shaped Silicon Resonator Using (2,1) In-Plane Resonance Mode

Kenta Suzuki; Kumiko Ioka; Yasushiro Nishioka

doi:10.4028/www.scientific.net/AMM.189.274

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 189Ring-Shaped Silicon Resonator Using (2,1) In-Plane...

Ring-Shaped Silicon Resonator Using (2,1) In-Plane Resonance Mode

Abstract:

A ring-shaped low-frequency resonator operating in the in-plane (2,1) mode was designed and fabricated utilizing anodic bonding of a 9-µm-thick single-crystal silicon to a glass substrate. Although the gap between the ring and the driving electrode was relatively large (900 nm), a high quality factor of 4212 at 1.609 MHz was realized. The motional resistance was 1.853 MW. In addition, the resonant frequency was electrically tuned by varying the dc bias of drive electrodes with 21.5 ppm/V. Therefore, it was expected that this resonator could possibly replace low frequency quarts resonators of a few MHz ranges.

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Periodical:

Applied Mechanics and Materials (Volume 189)

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274-280

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.189.274

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Online since:

July 2012

Authors:

Kenta Suzuki, Kumiko Ioka, Yasushiro Nishioka

Keywords:

(2,1) In-Plane Mode, Anodic Bonding, Ring-Shaped Silicon Resonator

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