A SEE Hardened Read-Out Circuit of EEPROM for Space Application

Xin Jie Zhou; Jing He Wei; Lei Lei Li

doi:10.4028/www.scientific.net/AMM.198-199.1105

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 198-199A SEE Hardened Read-Out Circuit of EEPROM for...

A SEE Hardened Read-Out Circuit of EEPROM for Space Application

Abstract:

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.

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Periodical:

Applied Mechanics and Materials (Volumes 198-199)

Pages:

1105-1109

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.198-199.1105

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Online since:

September 2012

Authors:

Xin Jie Zhou, Jing He Wei, Lei Lei Li

Keywords:

EEPROM, Radiation Hardened, Read-Out Circuit, SEE

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