Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

Yu Fei You; C. H. Xu; Jun Peng Wang; Yu Liang Liu; Jin Feng Xiao; Yu Tao Dong

doi:10.4028/www.scientific.net/AMM.204-208.4207

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 204-208Preparation of PZT Ferroelectric Thin Films by...

Preparation of PZT Ferroelectric Thin Films by Sol-Gel Process

Abstract:

Sol-gel method is used for the formation of Pb(Zr0.63Ti0.37)O3(PZT) thin films. The initial films were formed with spin coating sol solution on silicon wafer and drying coated wet sol film at 300°C for 5min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. 4 initial films were annealed at 500°C for 2h to obtain PZT ceramics films. The morphologies of the surface and cross-section of PZT films were observed with a scanning electronic microscope (SEM). The phase structures of PZT films were analyzed using an X-ray diffraction meter (XRD). Experimental results show that PZT film prepared by coating wet sol on silicon once can be high smooth and compact film.

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Periodical:

Applied Mechanics and Materials (Volumes 204-208)

Pages:

4207-4210

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.204-208.4207

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Online since:

October 2012

Authors:

Yu Fei You, C. H. Xu, Jun Peng Wang, Yu Liang Liu, Jin Feng Xiao, Yu Tao Dong

Keywords:

Piezoelectric Material, PZT Ferroelectric Thin Films, Sol-Gel (SG)

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