Dielectric Properties of Sol-Gel Prepared Ni-Doped CaCu₃Ti₄O₁₂ Ceramics

Abstract:

Dielectric properties of sol–gel prepared Ni-doped calcium copper titanate Ceramics (CCNTO) are investigated. For the x of CaCu3NixTi4O12+x is 0, 0.1, 0.2, 0.3 respectively. The XRD pattern shows that crystal structure of the sample without Ni is basically single-phase. The dielectric properties of CCNTO were analyzed by Agilent 4294A. The experimental results show that the sample has a better dielectric properties when x=0.2. The maximum dielectric constants is found when x=0.2. The dielectric loss decreased with the increases of Ni in the low frequency region, the high frequency region is just the opposite, the sample has lower dielectric loss in the low frequency region when x=0.2.

• Periodical: Applied Mechanics and Materials (Volumes 204-208)
• Pages: 4193-4196
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.204-208.4193
• Online since: October 2012
• Authors: Lei Jiao, Hui Li, Yan Wei Yang, Tian Ping Wang
• Keywords: CCNTO, Crystal Structure, Dielectric Property, Sol-Gel (SG)

References

[1] M. A. Subramanian, D. Li, N. Duan, B. A. Reisner and A. W. Sleight, J Solid State Chem, Vol. 151(2000), p.323.

[2] A. P. Ramirez, M. A. Subramanian, M. Gardel, G. Blumberg, D. Li, T. Vogt and S. M. Shapiro, Solid State Commun, Vol. 115(2000), p.217.

DOI: 10.1016/s0038-1098(00)00182-4

[3] C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto and A. P. Ramirez, Science, Vol. 293(2001), p.673.

[4] P. Lunkenheimer, R. Fichtl, S. G. Ebbinghaus and A. Loidl, Phys Rev B, Vol. 70(2004), p.

[5] D. C. Sinclair, T. B. Adams, F. D. Morrison and A. R. West, Appl Phys Lett, Vol. 80(2002), p.2153.

[6] Y. H. Lin, J. N. Cai, M. Li, C. W. Nan and J. L. He, Appl Phys Lett, Vol. 88(2006), p.

[7] S. Ke, H. Huang and H. Fan, Applied Physics Letters, Vol. 89 (2006), p.

[8] S. Y. Chung, I. D. Kim and S. Kang, Nature Materials, Vol. 3(2004), p.774.

[9] X. Q. Liu, S. Y. Wu and X. M. Chen, J Alloy Compd, Vol. 507(2010), p.230.

[10] Y. H. Lin, J. F. Wang, L. Jiang, Y. Chen and C. W. Nan, Appl Phys Lett, Vol. 85(2004), p.5664.

[11] L. Chang, D. Lee, C. Ho and B. Chiou, Thin Solid Films, Vol. 516(2007), p.454.

[12] L. Chang, C. Yang and H. Kao, Thin Solid Films, Vol. 519(2011), p.5095.

[13] P. Jha, P. Arora and A. K. Ganguli, Mater Lett, Vol. 57(2003), p.2443.