Bridge Action of Double-Deck Films Interface Electrons

Zhi Guo Zhang

doi:10.4028/www.scientific.net/AMM.217-219.1038

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 217-219Bridge Action of Double-Deck Films Interface...

Bridge Action of Double-Deck Films Interface Electrons

Abstract:

When both SnO2 film and a-Si film with infinite square resistance are deposited on an ITO film, the square resistance of the ITO film notably decreases. This phenomenon is more remarkable, when an ITO film has large square resistance. We believe that the films are composed of spaced crystalline grains. The film resistance is due to crystal boundary scattering carriers. Smaller crystalline grain and greater distance to the crystal boundary lead to fiercer scattering. The crystalline grains of the SnO2 film and a-Si film short-circuit the spaced ITO grains to form bridges so interface electrons can flow trough.

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Periodical:

Applied Mechanics and Materials (Volumes 217-219)

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1038-1042

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.217-219.1038

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Online since:

November 2012

Authors:

Zhi Guo Zhang

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Bridge Action, Double-Deck Film, Interface

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References

[1] Su C. H, Pang D. W, Zhang Z. G, Chinese Journal of Semiconducrors, Vol. 12 (1991), p.709

Google Scholar

[2] Yang Zhiwei, Han Shenghao, Yang Tianlin, Acta Physics Sinica, Vol. 49,（2000）, p.1200

Google Scholar

[3] Yutaka Ohhata*, Fujitoshi Shinoki and Sada Fumi Yoshida, Thin Solid Films, Vol.59, (1979), pp.255-261

DOI: 10.1016/0040-6090(79)90298-0

Google Scholar

[4] V.Sittinger，F.Ruske，W.Werner，C.Jacobs B.Szyszka, D.J. Christie, Thin solid films, Vol.516, (2008),pp.5847-5859

DOI: 10.1016/j.tsf.2007.10.031

Google Scholar

[5] S.Diplas, A.Ulyashin, K.Maknys, A.E. Gunnaes, S.Jorgensen, D.Wright, J.F. Watts, Thin solid films, Vol.515, (2007), pp.8539-8543

DOI: 10.1016/j.tsf.2007.03.091

Google Scholar

[6] Masayuki Okuya, Nobuyuki.Ito, Katsuyuki Shiozaki, Thin Solid Films, Vol.515, (2007) pp.8656-8659

DOI: 10.1016/j.tsf.2007.03.148

Google Scholar

[7] Jiaxiang Liu, Da Wu, Shengnan Zeng ,Journal of Materials Processing Technology, Vol.209,(2009),pp.3943-3948

Google Scholar

[8] J.H. Chae, Daeil Kim, Renewable Energy, Vol.35, (2010), pp.314-317

Google Scholar

[9] D. Zhang, A. Tavakoliyaraki, Y. Wu, R.A.C.M.M. van Swaaij, M. Zeman,Energy Procedia, Vol.8, (2011),pp.207-213

DOI: 10.1016/j.egypro.2011.06.125

Google Scholar

[10] S. Venkatachalam, H. Nanjo, K. Kawasaki, Y. Wakui, H. Hayashi, T. Ebina, Applied Surface Science, Vol.257, (2011), pp.8923-8928

DOI: 10.1016/j.apsusc.2011.05.065

Google Scholar

[11] T.D. Jung, P.K. Song, Current Applied Physics, Vol. 11, (2011), p.314-S319

Google Scholar