Preparation and Conductive Properties of Ag Thin Film by DC Magnetron Sputtering Method

Jian Guang Lin; Wei Xiang Weng; Wei Hui Huang; Hai Fang Zhou

doi:10.4028/www.scientific.net/AMM.217-219.1068

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 217-219Preparation and Conductive Properties of Ag Thin...

Preparation and Conductive Properties of Ag Thin Film by DC Magnetron Sputtering Method

Abstract:

Ag thin films were prepared on the float-glass substrate by DC magnetron sputtering method. The relationship of surface morphology/electrical properties with technical conditions was investigated. The experimental results showed that sputtering power, sputtering pressure and substrate temperature had effects on the morphology and electrical properties of Ag thin films. The optimum parameters were obtained with sputtering power of 100 W，sputtering pressure of 0.4 Pa and substrate temperature of 130 °C. Under the optimum parameters, the deposited Ag thin film was smooth and its resistivity was as low as 1.96×10^-8 Ω•m.

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Periodical:

Applied Mechanics and Materials (Volumes 217-219)

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1068-1072

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.217-219.1068

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Online since:

November 2012

Authors:

Jian Guang Lin, Wei Xiang Weng, Wei Hui Huang, Hai Fang Zhou

Keywords:

Ag Thin Film, DC Magnetron Sputtering, Resistivity

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