The Gas Phase Reaction Crystallization Mechanisms of Amorphous SiCN Ceramic Annealed in Vacuum

Yi Xia; Hong Fang Li

doi:10.4028/www.scientific.net/AMM.217-219.2497

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 217-219The Gas Phase Reaction Crystallization Mechanisms...

The Gas Phase Reaction Crystallization Mechanisms of Amorphous SiCN Ceramic Annealed in Vacuum

Abstract:

Microstructures of precursor-derived amorphous SiCN ceramics under conditions of vacuum and high temperature (1300°C, 1900°C) were observed by transmission electron microscopy. The gas phase reaction crystallization mechanisms of amorphous SiCN in vacuum was investigated based on thermodynamic calculation. The results indicate vacuum heat treatment can promote decomposition, induces gaseous species (SiO, CO and Si vapor) production. Gas phase reaction between Si(g), SiO(g) and C induces SiC nucleation inside amorphous ceramic network. Free Si- and N- can not form Si-N-enriched regions and N- is discharged in the form of N2. The crystallization of amorphous SiCN in vacuum displays significant difference to that in N2 and Ar.

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Periodical:

Applied Mechanics and Materials (Volumes 217-219)

Pages:

2497-2500

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.217-219.2497

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Online since:

November 2012

Authors:

Yi Xia*, Hong Fang Li

Keywords:

Amorphous SiCN Ceramic, Crystallization, Gas Phase Reaction, Microstructure

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