Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga 0.78As Pseudomorphic HEMTs

Zhi Ming Wang; Jin Chao Mou; Wei Hua Yu; Xin Lv

doi:10.4028/www.scientific.net/AMM.229-231.2007

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 229-231Design of Double Delta-Doped...

Design of Double Delta-Doped Al_0.22Ga_0.78As/In_0.22Ga _0.78As Pseudomorphic HEMTs

Abstract:

In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.

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Applied Mechanics and Materials (Volumes 229-231)

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2007-2009

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https://doi.org/10.4028/www.scientific.net/AMM.229-231.2007

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November 2012

Authors:

Zhi Ming Wang, Jin Chao Mou, Wei Hua Yu, Xin Lv

Keywords:

Delta-Doped, Pseudomorphic HEMTs, Short Channel Effects

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References

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