A SiGe RF Power Amplifier for TD-SCDMA Application

Wen Yuan Li; Sheng Zheng

doi:10.4028/www.scientific.net/AMM.236-237.765

Paper Titles

Application and Research on Reducing Reaction of Boron Slag in the Steelmaking Engineering
p.747

Research on Model of Solid-Solid Reaction and Experiment
p.751

Thermodynamic Research of Boron Oxide Reducing with Carbothermic Method
p.755

Electric Power Tower Inclination Angle Detection Method Based on SIFT Feature Matching
p.759

A SiGe RF Power Amplifier for TD-SCDMA Application
p.765

Study on the UV Photosensitive of Hexaarylbiimidazole Photoinitiator System
p.771

A New Federation Approach in Analysis of Pharmaceuticals
p.775

An Approach for Data Analysis of Multi-Group Metabonomics Base on Hierarchical-PCA
p.779

Comparing Level Set Method and Canny Algorithm for Edge Detection to Tongue Diagnosis in Traditional Chinese Medicine
p.783

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 236-237A SiGe RF Power Amplifier for TD-SCDMA Application

A SiGe RF Power Amplifier for TD-SCDMA Application

Abstract:

A SiGe HBT power amplifier for Time Division Synchronous Code-Division Multiple-Access (TD-SCDMA) application with a single positive 3.3V supply has been demonstrated in this paper by adopting a newly proposed usage of the bonding wire. Though the emitter bonding wire may decrease the power gain, it can also decrease the effect of the knee voltage, thus increase the efficiency of the power amplifier. The post-simulation result shows that it can exhibit a linear gain of 29dB, output power of 30dBm, power-added efficiency of 38.49%, and -43dBc suppression at the second harmonic for TD-SCDMA application.

You might also be interested in these eBooks

Advanced Technology for Manufacturing Systems and Industry

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 236-237)

Pages:

765-770

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.236-237.765

Citation:

Cite this paper

Online since:

November 2012

Authors:

Wen Yuan Li, Sheng Zheng

Keywords:

Layout, Matching Network, Power Amplifier, Schematic, SiGe HBT

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J. Kraft, et al., BVCER - Increased Operating Voltage for SiGe HBTs, in Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International, 2006, pp.507-511.

DOI: 10.1109/relphy.2006.251270

Google Scholar

[2] S. C. Cripps, RF Power Amplifiers for Wireless Communications, 2 ed. Norwood: ARTECH HOUSE, (2006).

Google Scholar

[3] P. Juurakko, et al., Differential SiGe power amplifier for 3GPP WCDMA, in Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE, 2003, pp.133-136.

DOI: 10.1109/rfic.2003.1213910

Google Scholar

[4] A. Inoue, et al., The maximum operating region in SiGe HBTs for RF power amplifiers, in Microwave Symposium Digest, 2002 IEEE MTT-S International, 2002, pp.1023-1026.

DOI: 10.1109/mwsym.2002.1011805

Google Scholar

[5] J. H. Kim, et al., A low quiescent current 3. 3V operation linear MMIC power amplifier for 5 GHz WLAN applications, in Microwave Symposium Digest, 2003 IEEE MTT-S International, 2003, pp.867-870 vol. 2.

DOI: 10.1109/mwsym.2003.1212507

Google Scholar

[6] N. Youn Sub and P. Chul Soon, PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit, Solid-State Circuits, IEEE Journal of, vol. 37, pp.1096-1099, (2002).

DOI: 10.1109/jssc.2002.801169

Google Scholar

[7] W. Liu, et al., The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors, Electron Devices, IEEE Transactions on, vol. 43, pp.245-251, (1996).

DOI: 10.1109/16.481724

Google Scholar