Effect of the Sputtering Presser on Structural and Optoelectrical Properties of ZnO: Ga Films Deposited on Flexible Substrates by DC Magnetron Sputtering

Abstract:

Transparent conducting Ga-doped ZnO (ZnO∶Ga) thin films with high transparency and relatively low resistivity have been successfully prepared on ZnO-buffered Polyimide (PI) by DC magnetron sputtering at room temperature. Structural, morphological, stress, optical and electrical proerties of ZnO∶Ga films are investigated. Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. Sputtering pressure plays an important role on the electrical resistivity of flexible ZnO∶Ga films. When sputteting pressure increases from 2 Pa to 6 Pa, the resistivity of the deposited films initially decreases and then slightly increases. At the optimum sputtering pressure of 4 Pa, the lowest resistivity of 4.3×10-4Ω•㎝ is obtained. All the filma present a high transmittance over 90％ in limit spectral range.

• Periodical: Applied Mechanics and Materials (Volumes 263-266)
• Pages: 90-94
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.263-266.90
• Online since: December 2012
• Authors: Xiao Li Wu, Yu Zhen Yuan, Han Fa Liu, Yun Yan Liu
• Keywords: DC Magnetron Sputtering, Flexible Substrat, PI, Sputtering Presser, Transparent Conducting Film, ZnO:Ga Film

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